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| SI3586DV New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.060 at VGS = 4.5 V N-Channel 20 0.070 at VGS = 2.5 V 0.100 at VGS = 1.8 V 0.110 at VGS = - 4.5 V P-Channel - 20 0.145 at VGS = - 2.5 V 0.220 at VGS = - 1.8V ID (A) 3.4 3.2 2.5 - 2.5 - 2.0 - 1.0 FEATURES * TrenchFET(R) Power MOSFET * Fast Switching In Small Footprint * Very Low rDS(on) for Increased Efficiency RoHS COMPLIANT APPLICATIONS * Load Switch for Portable Devices TSOP-6 Top View G1 1 6 D1 D1 S2 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm Ordering Information: SI3586DV-T1-E3 (Lead (Pb)-free) S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.05 1.15 0.73 0.75 0.83 0.53 3.4 2.7 2.9 2.3 8 - 1.05 1.15 0.73 - 55 to 150 - 0.75 0.83 0.53 W C N-Channel 5 sec Steady State 20 8 - 2.5 - 2.0 - 2.1 - 1.7 A P-Channel 5 sec Steady State - 20 Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 90 Maximum 110 150 90 C/W Unit Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 1 SI3586DV Vishay Siliconix New Product SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = 0 V, VGS = 8 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 C VDS = - 20 V, VGS = 0 V, TJ = 85 C On-State Drain Currenta ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 3.4 A VGS = - 4.5 V, ID = - 2.5 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 3.2 A VGS = - 2.5 V, ID = - 2.0 A VGS = - 1.8 V, ID = - 2.5 A VGS = - 1.8 V, ID = - 1.0 A Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr N-Channel VDD = 10 V, RL = 10 ID 1 A, VGEN = 4.5 V, RG = 6 P-Channel VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, RG = 6 IF = 1.05 A, di/dt = 100 A/s IF = - 1.05 A, di/dt = 100 A/s N-Ch N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.4 A P-Ch N-Ch 4.1 5 0.65 0.68 0.8 1.3 2.6 9.8 30 28 52 55 25 55 20 32 25 25 45 45 85 85 40 85 30 50 40 40 ns 6.0 7.5 nC gfs VSD VDS = 5 V, ID = 3.4 A VDS = - 5 V, ID = - 2.5 A IS = 1.05 A, VGS = 0 V IS = - 1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 -5 0.047 0.086 0.054 0.116 0.075 0.170 13 6 0.8 - 0.8 1.1 - 1.1 0.060 0.110 0.070 0.145 0.100 0.220 S V 0.40 - 0.40 1.1 - 1.1 100 100 1 -1 10 - 10 A A V nA Symbol Test Conditions Min Typ Max Unit P-Ch P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 SI3586DV New Product N-CHANNEL TYPICAL CHARACTERISTICS 8 7 6 I D - Drain Current (A) 5 1.5 V 4 3 2 1 0 0 1 2 3 4 5 I D - Drain Current (A) VGS = 5 thru 2 V Vishay Siliconix 25 C unless noted 8 7 6 5 4 3 TC = 125 C 2 25 C 1 - 55 C 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 600 Transfer Characteristics 0.08 r DS(on) - On-Resistance () C - Capacitance (pF) VGS = 4.5 V 500 Ciss 400 0.06 300 0.04 VGS = 2.5 V 200 Coss Crss 0 4 8 12 16 20 0.02 100 0.00 0 1 2 3 4 5 6 7 8 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 1.6 Capacitance 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.4 A r DS(on) - On-Resistance (Normalized) 1.4 VGS = 4.5 V ID = 3.4 A 4 1.2 3 1.0 2 1 0.8 0 0 1 2 3 4 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 3 SI3586DV Vishay Siliconix 10 New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 C unless noted 0.25 0.20 r DS(on) - On-Resistance () I S - Source Current (A) ID = 3.4 A 0.15 TJ = 150 C 1 TJ = 25 C 0.10 0.05 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 ID = 250 A 6 V GS(th) Variance (V) 0.0 Power (W) 8 On-Resistance vs. Gate-to-Source Voltage 0.1 - 0.1 4 - 0.2 2 - 0.3 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (C) Threshold Voltage 10 Limited by rDS(on) Single Pulse Power (Junction-to-Ambient) I D - Drain Current (A) 1 ms 1 10 ms 0.1 TC = 25 C Single Pulse 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 SI3586DV New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 5 SI3586DV Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 C unless noted 8 7 6 2V I D - Drain Current (A) I D - Drain Current (A) 5 4 3 2 1 0 0 1 2 3 4 5 1.5 V 5 125 C 4 3 2 1 0 0.0 VGS = 5 thru 2.5 V 8 7 6 TC = - 55 C 25 C 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.75 650 Transfer Characteristics 0.60 r DS(on) - On-Resistance () C - Capacitance (pF) 520 Ciss 0.45 390 0.30 VGS = 1.8 V VGS = 2.5 V 0.15 VGS = 4.5 V 0.00 0 1 2 3 4 5 6 7 8 260 Coss 130 Crss 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6.5 VDS = 10 V ID = 2.5 A V GS - Gate-to-Source Voltage (V) 5.2 r DS(on) - On-Resistance (Normalized) 1.6 VGS = 4.5 V ID = 2.5 A 1.4 Capacitance 3.9 1.2 2.6 1.0 1.3 0.8 0.0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 6 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 SI3586DV New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 C unless noted 10 0.5 Vishay Siliconix 0.4 r DS(on) - On-Resistance () I S - Source Current (A) TJ = 150 C 1 0.3 ID = 2.5 A 0.2 TJ = 25 C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 8 On-Resistance vs. Gate-to-Source Voltage 0.3 6 V GS(th) Variance (V) 0.2 ID = 250 A 0.1 Power (W) 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (C) Threshold Voltage 10 Limited by rDS(on) Drain Current (A) Single Pulse Power (Junction-to-Ambient) 1 ms 1 10 ms ID 0.1 TC = 25 C Single Pulse 100 ms 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 72310 S-60422-Rev. C, 20-Mar-06 www.vishay.com 7 SI3586DV Vishay Siliconix 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance New Product P-CHANNEL TYPICAL CHARACTERISTICS 25 C unless noted 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72310. www.vishay.com 8 Document Number: 72310 S-60422-Rev. C, 20-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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